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US 7,173,310 B2Granted
Lateral lubistor structure and method
AssigneeInternational Business Machines Corporation
InventorsSteven H. Voldman, Jack A. Mandelman
Life of this patent
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Abstract
An ESD LUBISTOR structure based on FINFET technology employs a vertical fin (a thin vertical member containing the source, drain and body of the device) in alternatives with and without a gate. The gate may be connected to the external electrode being protected to make a self-activating device or may be connected to a reference voltage. The device may be used in digital or analog circuits.
Claims14
A structure in an integrated circuit, comprising:
- an elongated vertical fin member having a thickness in a range of 10 nm to 100 nm and comprising a semiconductor, said elongated vertical fin member projecting from a bulk semiconductor substrate and having a top and two opposite elongated sides, in which
- a first electrode is formed in a first end of said elongated vertical fin member and
- a second electrode, of opposite polarity to said first electrode, is formed in a second end of said elongated vertical fin member opposite said first end,
- said first and said second electrodes being doped with an electrode concentration greater than a dopant concentration in a central portion between said first and second electrodes.
1 more element
Dependencies are inferred from the claim text.