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US 7,166,413 B2Granted
Enabling chain scission of branched photoresist
AssigneeIntel Corporation
InventorsHeidi B. Cao, Robert P. Meagley
Life of this patent
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Abstract
By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.
Claims9
A semiconductor structure comprising:
- a semiconductor substrate;
- and
- an unexposed photoresist, including a branched chain scission polymer, over said substrate.
Dependencies are inferred from the claim text.