Silicon-on-insulator active pixel sensors
AssigneeVoxtel, Inc.
InventorGeorge Melville Williams, Jr.
Life of this patent
Estimating the term…
Abstract
Active pixel sensors are defined on double silicon on insulator (SOI) substrates such that a first silicon layer is selected to define radiation detection regions, and a second silicon layer is selected to define readout circuitry. The first and second silicon layers are separated by an insulator layer, typically an oxide layer, and the layers can be independently doped. Doping can be provided in the silicon layers of the SOI substrate during assembly of the SOI substrate, or later during device processing. A semiconductor substrate that supports the first and second layers can be removed for, for example, back side radiation detection, using a second insulator layer (typically an oxide layer) as an etch stop.
Claims34
A method of making a semiconductor device comprising:
- providing a multi-layer semiconductor-on-insulator (SeOI) wafer structure that includes a supporting substrate, a buried first semiconductor layer on the supporting substrate, a second semiconductor layer, and a buried insulator (BI) layer, wherein the second semiconductor layer is situated on the BI layer, and the BI layer is situated on the first semiconductor layer;
- defining a radiation detection region in the first semiconductor layer;
- defining a readout circuit element in the second semiconductor layer so as to be in communication with the radiation detection region in the first semiconductor layer;
- and
- removing the supporting substrate.
A semiconductor device fabrication method, comprising:
- defining a first buried charge collection region in a first semiconductor layer;
- defining at least a second buried charge collection region in a second semiconductor layer;
- defining a buried insulator layer situated between the first and second semiconductor layers;
- and
- defining a readout circuit in electrical communication with the first and second charge collection regions.
A method of making a semiconductor device, comprising:
- providing a supporting substrate, a first buried insulator (BI) layer situated on the supporting substrate, a first semiconductor layer situated on the first BI layer, a second BI layer situated on the first semiconductor layer, and a second semiconductor layer situated on the second BI layer;
- forming a radiation detection region in the first semiconductor layer;
- and
- forming at least one readout circuit element in the second semiconductor layer and configured to be in communication with the radiation detection region defined in the first semiconductor layer.
Dependencies are inferred from the claim text.