Methods for atomic-layer deposition of aluminum oxides in integrated circuits
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.
Claims19
A method of operating a deposition system having a gas-distribution fixture for distributing gas over a substrate, the method comprising:
- introducing an aluminum precursor into the chamber through the gas-distribution fixture;
- and
- purging the chamber of at least a portion of the aluminum precursor through the gas-distribution fixture.
A method of operating a deposition system, the method comprising:
- providing a first chamber including at least one substrate;
- forming a second chamber within the first chamber and substantially enclosing the one substrate;
- introducing an oxidant into the second chamber;
- and
- introducing an aluminum precursor into the second chamber.
A method of operating a deposition system, the method comprising:
- loading at least one substrate into a first chamber;
- forming a second chamber around the one substrate;
- introducing an oxidant into the second chamber;
- purging the second chamber of at least a portion of the oxidant;
- introducing an aluminum precursor into the second chamber;
- purging the second chamber of at least a portion of the aluminum precursor;
- opening the second chamber;
- and
- unloading the one substrate from the first chamber.
A method of operating a deposition system, the method comprising:
- loading at least one substrate into a first chamber;
- forming a second chamber around the one substrate;
- introducing an oxidant into the second chamber;
- purging the second chamber of at least a portion of the oxidant;
- introducing an aluminum precursor into the second chamber;
- purging the second chamber of at least a portion of the aluminum precursor;
- opening the second chamber;
- and
- annealing the one substrate in the first chamber;
- unloading the one substrate from the first chamber.
A method of making a gate dielectric layer in an integrated-circuit assembly, the method comprising:
- loading the integrated-circuit assembly into a first chamber;
- forming a second chamber around the assembly;
- introducing an oxidant into the second chamber;
- purging the second chamber of at least a portion of the oxidant;
- introducing an aluminum precursor into the second chamber;
- purging the second chamber of at least a portion of the aluminum precursor;
- opening the second chamber;
- and
- annealing the assembly in the first chamber;
- unloading the one substrate from the first chamber.
Dependencies are inferred from the claim text.