High-frequency power amplifier

A high-frequency power amplifier for amplifying a high-frequency signal, comprising:

• a high-frequency signal amplification transistor for amplifying the high-frequency signal;
• a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
• an inductor connected between the high-frequency signal amplification transistor and the bias circuit;
• and
• a capacitor connected at one end between the bias circuit and the inductor and grounded at another end,
• wherein the bias circuit includes:
• a current supply transistor for supplying current to the high-frequency signal amplification transistor;
• and
• a temperature compensation circuit for temperature-compensating the high-frequency signal amplification transistor, wherein
• the high-frequency signal amplification transistor and the bias circuit are formed on a semiconductor substrate,
• the high-frequency power amplifier further comprising a resistor connected between the high-frequency signal amplification transistor and the inductor.

A high-frequency power amplifier for amplifying a high-frequency signal, comprising:

• a high-frequency signal amplification transistor for amplifying the high-frequency signal;
• a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
• an inductor connected between the high-frequency signal amplification transistor and the bias circuit;
• and
• a capacitor connected at one end between the bias circuit and the inductor and grounded at another end,
• wherein the bias circuit includes:
• a current supply transistor for supplying current to the high-frequency signal amplification transistor;
• and
• a temperature compensation circuit for temperature-compensating the high-frequency signal amplification transistor, wherein
• the high-frequency signal amplification transistor and the bias circuit are formed on a semiconductor substrate, and
• the inductor is a spiral inductor formed on the semiconductor substrate,
• the high-frequency power amplifier further comprising a resistor connected between the high-frequency signal amplification transistor and the spiral inductor.

A high-frequency power amplifier for amplifying a high-frequency signal, comprising:

• a first transistor for amplifying the high-frequency signal;
• and
• a bias circuit for supplying bias current to a base electrode of the first transistor,
• wherein the bias circuit includes:
• a second transistor having a characteristic different from that of the first transistor;
• and
• a temperature compensation circuit for temperature-compensating the first transistor, wherein
• the second transistor has a high frequency gain lower than that of the first transistor.