Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices
AssigneeNanosys, Inc.
InventorsStephen Empedocles, Larry Bock, Calvin Y. H. Chow, Xianfeng Duan, Chunming Niu, George Pontis, Vijendra Sahi, Linda T. Romano, David Stumbo
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Abstract
Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.
Claims15
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the first material is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the first material comprises a dopant that is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the first region and second region are not adjacent to one another along the length of the nanostructure and the first material is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the first material comprises silicon and the second material comprises germanium and the first material is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the second region comprises a P-N junction and the first material is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
A method of harvesting a nanostructure from a substrate, the nanostructure comprising at least a first region comprising a first material and a second region comprising a second material, wherein the nanostructure is attached to the substrate at a first end of the nanostructure and the first region of the nanostructure is located along the length of the nanostructure at a location which is not immediately adjacent to the first end of the nanostructure and the first material is differentially etchable from the second material, the method comprising etching away the first material of the nanostructure to release the nanostructure from the substrate at the first region.
Dependencies are inferred from the claim text.