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US 7,148,520 B2Granted
Diode having vertical structure and method of manufacturing the same
AssigneeLG Electronics Inc.
InventorMyung Cheol Yoo
Life of this patent
Estimating the term…
Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Claims46
A light emitting diode, comprising:
- a conductive layer;
- a buffer layer including n-type material directly on the conductive layer;
- an active layer on the buffer layer;
- a p-GaN layer on the active layer;
- and
- a p-electrode on the p-GaN layer;
- wherein the conductive layer is an n-electrode and a reflective layer configured to reflect light from the active layer.
4 more elements
A light emitting diode, comprising:
- a first electrode;
- a buffer layer and a p-type layer on the first electrode;
- an active layer between the buffer layer and the p-type layer;
- and
- a second electrode contacting the p-type layer;
- wherein the first electrode covers the buffer layer and is a reflective layer configured to reflect light from the active layer.
3 more elements
A diode, comprising:
- a first electrode;
- a buffer layer including n-type material directly on the first electrode;
- an epitaxially grown GaN layer on the buffer layer;
- a second electrode;
- an active layer between the first and second electrodes;
- wherein the first electrode is a reflective layer to reflect light from the active layer.
3 more elements
A light emitting diode, comprising:
- a reflective conductive layer of a first conductivity;
- a GaN buffer layer of the first conductivity directly on the reflective conductive layer;
- a first GaN layer of the first conductivity directly on the GaN buffer layer;
- an active layer on the first GaN layer;
- a second GaN layer of a second conductivity on the active layer;
- and
- an electrode of the second conductivity on the second GaN layer,
- wherein the reflective conductive layer is configured to reflect light from the active layer.
5 more elements
A method of making a light emitting diode having an n-contact comprising:
- forming an n-GaN layer directly on a first side of an n-GaN buffer layer;
- forming an AlInGaN active layer on the n-GaN layer;
- forming a cladding layer on the AlInGaN active layer;
- forming a p-GaN layer on the cladding layer;
- forming a p-type electrode on the p-GaN layer;
- forming a transparent conductive layer on the p-GaN layer;
- and
- forming an n-type electrode directly on a second side of the n-GaN buffer layer, wherein the n-type electrode is a reflective layer configured to reflect light from the AlInGaN active layer.
5 more elements
A diode comprising:
- a buffer layer having first and second surfaces;
- an n-GaN layer directly on the first surface of the buffer layer;
- an active layer on the n-GaN layer;
- a p-GaN layer on the active layer;
- a p-electrode on the p-GaN layer;
- and
- an n-electrode directly on the second surface of the buffer layer
- wherein the n-electrode is a reflective layer configured to reflect light from the active layer.
5 more elements
A light emitting diode, comprising:
- a conductive layer, wherein the conductive layer includes a metal selected from the group consisting of aluminum, Ti/Al, Cr/Au, and Ti/Au;
- a buffer layer, including n-type material, directly on the conductive layer;
- an active layer on the buffer layer;
- a p-GaN layer on the active layer;
- and
- a p-electrode on the p-GaN layer;
- wherein the conductive layer is an electrode and a reflective layer configured to reflect light from the active layer.
4 more elements
Dependencies are inferred from the claim text.