US 7,130,318 B2 · Electrooptic Q-switch element made of crystal

Abstract

This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of La3Ga5SiO14 or Nd:La3Ga5SiO14 or the other related crystal materials such as La3Ga5-xAlxSiO14, Sr3Ga2Ge4SiO14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga5.5Nb0.5O14 and La3Ga5.5Ta0.5O14 with the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.

Claims7

Dependent claims

A single crystal electrooptic Q-switch device, comprising:

a langasite (LGS) electrooptic single crystal having an optical activity;
and
a reflection element, the reflection element being arranged on one side of the LGS crystal along a direction defined by the optical axis of the LGS crystal, the Q-switch device being arranged to receive a linearly polarized light beam at a side of the LGS crystal opposite to the side where the reflection element is disposed, the light beam propagation direction being parallel to the optical axis of the LGS crystal so that an incident light beam propagating through the LGS crystal along the optical axis is reflected by the reflection element and passes through the LGS crystal again such that the rotation angle of the polarization plane of the light originating from the optical activity of the LGS crystal is zero degrees.

Dependencies are inferred from the claim text.

Electrooptic Q-switch element made of crystal

Life of this patent

Electrooptic Q-switch element made of crystal

Life of this patent

Abstract

Claims7