Delay time estimation method and recording medium storing estimation program
AssigneeRenesas Technology Corp.
InventorsMichio Komoda, Shigeru Kuriyama
Life of this patent
Estimating the term…
Abstract
The operating characteristic of a transistor, modeled by a resistive element having fixed resistance and a power source voltage that varies with time, is segmented into a linearity region in which a current increases as a gate potential varies and a saturation region in which the current gradually decreases as the gate potential remains at a constant level, so that gradual decrease in current in a saturation region of the transistor is properly reflected and a delay time is estimated in a precise manner.
Claims5
A delay time estimation method for estimating a delay time in a logic circuit that includes a MOS transistor
- said method comprising the steps of:
- constructing a delay library including function information for specifying a model of an Ids-Vds characteristic at a given gate potential and also including function information related to a slew rate specifying a fixed delay, where Ids denotes a drain-source current and Vds denotes a drain-source voltage;
- modeling the MOS transistor by a resistive element having fixed resistance and a power source voltage that varies with time;
- determining an operating current characteristic of the MOS transistor thus modeled and segmenting the operating current characteristic based upon the delay library into a first region in which a current increases as a gate potential varies, a second region corresponding to a saturation region of the MOS transistor in which region the current gradually decreases as the gate potential remains constant, and a third region corresponding to a linearity region of the MOS transistor in which region the current decreases as the gate potential remains constant;
- and
- storing the determined estimated delay time of the MOS transistor and output thereof.
Dependencies are inferred from the claim text.