On-chip temperature sensor for low voltage operation
AssigneeSTMicroelectronics Asia Pacific Pte Ltd
InventorKyun Kyu Choi
Life of this patent
Estimating the term…
Abstract
An on-chip temperature sensor for a semiconductor device. A temperature sensing mechanism includes a first current generator producing a first current that is proportional to absolute temperature of the semiconductor device. A second current generator produces a second current that is inversely proportional to absolute temperature of the semiconductor device. A current mode amplifier is coupled to amplifying the difference between the first current and the second current to produce a temperature signal.
Claims17
A method of monitoring temperature in a semiconductor device, the method comprising:
- generating a first current on the semiconductor device that is proportional to absolute temperature of the semiconductor device;
- generating a second current on the semiconductor device that is inversely proportional to absolute temperature of the semiconductor device;
- comparing the difference between a replica of the first current and a replica of the second current at a first amplification factor to produce a first temperature signal;
- and
- comparing the difference between a replica of the first current and a replica of the second current at a second amplification factor to produce a second temperature signal.
A temperature sensing mechanism comprising:
- a first current generator producing a first current that is proportional to absolute temperature of the semiconductor device;
- a second current generator producing a second current that is inversely proportional to absolute temperature of the semiconductor device;
- and
- a current-based comparison circuit comprising:
- a first comparator stage detecting the difference between of the first current and the second current at a first amplification factor to produce a first temperature signal;
- and
- a second comparator stage detecting the difference between the first current and the second current at a second amplification factor to produce a second temperature signal.
A method of monitoring temperature in a semiconductor device, comprising:
- generating a first voltage with positive temperature coefficient;
- generating a second voltage with negative temperature coefficient;
- converting the first and second voltages into a plurality of currents using a plurality of first conductivity devices and into a plurality of currents using a plurality of second conductivity devices;
- comparing the currents of a first set of the first and the second conductivity devices to determine when a first temperature is reached;
- and
- comparing the currents of a second set of the first and the second conductivity devices to determine when a second temperature is reached.
A method of monitoring temperature in a semiconductor device, comprising:
- generating a first current with positive temperature coefficient;
- generating a second current with negative temperature coefficient;
- mirroring the first and second currents with first and second current mirrors, wherein outputs of the first and second current mirrors are coupled;
- and
- mirroring the first and second currents with third and fourth current mirrors, wherein outputs of the third and fourth current mirrors are coupled;
- wherein said outputs are used to detect when predefined temperatures are reached.
Dependencies are inferred from the claim text.