Method for identifying a defective die site

A method for identifying at least one defective semiconductor die site on a substrate, comprising:

• providing a substrate having at least one semiconductor die site for at least one semiconductor die;
• inspecting the at least one semiconductor die site for defects;
• and
• forming a descriptor on a surface of the substrate, the descriptor including encoded information in the form of a computerized map of the substrate, the encoded information relating to the presence or absence of defects associated with the at least one semiconductor die site.

A method for identifying at least one defective semiconductor die site on a substrate, comprising:

• providing a substrate having at least one semiconductor die site for at least one semiconductor die;
• inspecting the at least one semiconductor die site for defects;
• and
• forming a descriptor on a surface of the substrate, the descriptor including encoded information relating to the presence or absence of defects associated with the at least one semiconductor die site, the descriptor formed by one of the group consisting of photolithography or chemical vapor deposition.

A method for identifying at least one defective semiconductor die site on a substrate, comprising:

• providing a substrate having at least one semiconductor die site for at least one semiconductor die;
• inspecting the at least one semiconductor die site for defects;
• and
• forming a descriptor on a surface of the substrate by forming marks in the surface of the substrate with optical energy, the descriptor including encoded information relating to the presence or absence of defects associated with the at least one semiconductor die site.

A method for identifying at least one defective semiconductor die site on a substrate, comprising:

• providing a substrate having a plurality of semiconductor die sites for at least one semiconductor die;
• inspecting the plurality of semiconductor die sites for defects;
• forming a descriptor on a surface of the substrate including information relating to the presence or absence of defects associated with the plurality of semiconductor die sites;
• reading the descriptor to obtain a semiconductor die site defect percentage;
• and
• discarding the substrate if the defect percentage exceeds a threshold percentage.