Direct conversion energy discriminating CT detector
AssigneeGeneral Electric Company
InventorDavid M. Hoffman
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Abstract
A CT detector capable of energy discrimination and direct conversion is disclosed. The detector includes multiple layers of semiconductor material with the layers having varying thicknesses. The detector is constructed to be segmented in the x-ray penetration direction so as to optimize count rate performance as well as avoid saturation.
Drawings
Claims14
A CT detector comprising:
- a first semiconductor layer spaced apart from a second semiconductor layer, the semiconductor layers designed to convert x-rays to electrical signals and collectively having a max photon count rate that is greater than a single semiconductor layer having a thickness equal to a composite thickness of the first and the second semiconductor layers;
- a readout layer sandwiched between the first and the second semiconductor layers, the readout layer designed to translate the electrical signals to a data acquisition system.
A CT detector comprising:
- a stacked arrangement of direct conversion layers aligned to directly convert x-rays to electrical signals;
- the stacked arrangement including a first direct conversion layer and a second direct conversion layer spaced apart from one another by a shared readout layer;
- the first direct conversion layer more absorbent of x-rays than the second direct conversion layer.
Dependencies are inferred from the claim text.