Surface emitting semiconductor laser and manufacturing method thereof, light module, light transmission device

A surface emitting semiconductor laser including a resonator formed on a substrate and emitting a laser beam toward a direction vertical to the substrate from an emitting surface formed on an upper surface of the resonator, comprising:

• a first electrode and a second electrode being formed on the upper surface of the resonator, at least a part of the first electrode being formed on the upper surface of the resonator, the resonator including a first mirror formed above the substrate, an active layer, and a second mirror located oppositely to the first mirror and sandwiching the active layer therebetween;
• an aperture that is formed on the upper surface of the resonator, the emitting surface being formed on the upper surface of the resonator within the aperture, and a reflectivity adjustment layer being formed in the emitting surface;
• and
• a thickness of the reflectivity adjustment layer varies;
• the second mirror including a layer of which the optical thickness is m1 λ/2 (m1, a natural number >0), when a wavelength of the laser beam is λ, the layer of which the optical thickness is m1 λ/2 is formed in whole area of the second mirror, the reflectivity adjustment layer is formed within a part of the aperture.

A method of manufacturing a surface emitting semiconductor laser including a resonator formed on a substrate and emitting a laser beam toward a direction vertical to the substrate from an emitting surface formed on an upper surface of the resonator, comprising:

• forming a resonator on the substrate;
• forming a layer of which an optical thickness is m1 λ/2 (m1, a natural number>0 ) in the second mirror;
• and
• forming a reflectivity adjustment layer of which an optical thickness is (2 m2−1) λ/4 (m2, a natural number >0 ),
• forming the layer of which the optical thickness is m1 λ/2 in whole area of the second mirror, and forming the reflectivity adjustment layer within a part of an aperture formed on the upper surface of the resonator.

A method of manufacturing a surface emitting semiconductor laser including a resonator formed on a substrate and emitting a laser beam toward a direction vertical to the substrate from an emitting surface formed on an upper surface of the resonator, comprising:

• forming a resonator on the substrate;
• forming a first electrode and a second electrode to inject a current into the resonator, at least a part of the electrode being formed on the upper surface of the resonator and an aperture is formed on the upper surface of the resonator,
• forming a first mirror above the substrate, an active layer, and a second mirror located oppositely to the first mirror and sandwiching the active layer therebetween, and
• forming a reflectivity adjustment layer on the emitting surface, wherein a thickness of the reflectivity adjustment layer varies,
• forming on the second mirror a layer of which the optical thickness is m1 λ/2 (m1, a natural number >0 ), when a wavelength of the laser beam is λ, the layer of which the optical thickness is m1 λ/2 is formed in whole area of the second mirror, the reflectivity adjustment layer is formed within a part of the aperture.