Semiconductor memory device for low power system
AssigneeHynix Semiconductor Inc.
InventorsHee-Bok Kang, Jin-Hong Ahn
Life of this patent
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Abstract
A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.
Claims31
A semiconductor memory device for outputting or storing a data in response to inputted address and command, comprising:
- a first cell array for outputting the data to one of a bit line and a bit line bar;
- a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar;
- a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar;
- a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block;
- and
- a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.
A method for performing a read operation and a write operation of a semiconductor memory device based on an inputted address and an inputted command, comprising the steps of:
- a) outputting a data stored in a cell array to one of a bit line and a bit line bar;
- b) outputting a reference signal generated from a reference cell block to the other of the bit line and the bit line bar;
- c) transmitting the data and the reference signal;
- d) sensing and amplifying a voltage difference between the data and the reference signal by using a low voltage and a high voltage;
- and
- e) floating the bit line and the bit line bar in response to a precharge command signal.
Dependencies are inferred from the claim text.