Memory device including parallel test circuit
AssigneeHynix Semiconductor Inc.
InventorsYun Seok Hong, Shin Ho Chu
Life of this patent
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Abstract
A memory device including a parallel test circuit can overcome a channel deficiency phenomenon of test equipment by reducing the number of input/output pads. The memory device including a parallel test circuit comprises a burst length regulating block, a parallel test block, an output block and a plurality of input/output pads. The burst length regulating block sets a second burst length at a test mode which is longer than a first burst length at a normal mode. The parallel test block compresses data and tests the compressed data by a repair unit. The output block sequentially outputs data outputted from at least two or more parallel test blocks depending on the second burst length. The plurality of input/output pads externally output data outputted from the output block.
Claims5
A memory device including a parallel test circuit, comprising:
- a burst length regulating block for setting a second burst length at a test mode which is longer than a first burst length at a normal mode;
- a parallel test block for compressing data and testing the compressed data by a repair unit;
- an output block for sequentially outputting data outputted from at least two or more parallel test blocks depending on the second burst length;
- and
- a plurality of input/output pads for externally outputting data outputted from the output block.
Dependencies are inferred from the claim text.