Method and driver for programming phase change memory cell
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-ho Ha, Beak-hyung Cho, Ji-hye Yi
Life of this patent
Estimating the term…
Abstract
In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
Claims22
A method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, comprising:
- first heating the memory cell to first temperature;
- and
- second heating the memory cell to second temperature following the first heating step, the second temperature being greater than the first temperature.
A driver for a phase change memory cell having a lower crystalline state and a higher crystalline state to the higher crystalline state, comprising:
- a heat application circuit configured to heat the memory cell;
- and
- a controller controlling the heat application circuit to place the memory cell in the higher crystalline state by first heating the memory cell to a first temperature and second heating the memory cell to a second temperature following heating of the memory cell the first temperature, the second temperature being greater than the first temperature.
Dependencies are inferred from the claim text.