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US 7,126,846 B2Granted
Method and driver for programming phase change memory cell
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-ho Ha, Beak-hyung Cho, Ji-hye Yi
Life of this patent
Estimating the term…
Abstract
In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
Claims17
A method of programming a phase change memory cell having a lower resistive state and a higher resistive state, comprising:
- placing the memory cell in the lower resistive state by first applying a first current to the memory cell and then second applying a second current to the memory cell, the second current being greater than the first current.
Dependencies are inferred from the claim text.