Deglitching circuits for a radiation-hardened static random access memory based programmable architecture
AssigneeActel Corporation
InventorWilliam C. Plants
Life of this patent
Estimating the term…
Abstract
The present invention comprises a device and a method for a deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array. The deglitching circuit for a radiation tolerant static random access memory (SRAM) based field programmable gate array comprises a configuration memory that has a plurality of configuration bits Read and write circuitry is provided to configure the plurality of configuration bits. A radiation hard latch is coupled to and controls a programmable element and an interface couples at least one of the plurality of configuration bits to the radiation hard latch when the write circuitry writes to the plurality of configuration bits.
Claims7
A deglitching circuit for a radiation tolerant static random access memory (SRAM) comprising:
- a configuration memory having a plurality of configuration bits;
- read and write circuitry coupled to said configuration memory to configure said plurality of configuration bits;
- a radiation hard latch coupled to and controlling a programmable element;
- and
- an interface coupling at least one of said plurality of configuration bits to said radiation hard latch when said write circuitry writes to said at least one of said plurality of configuration bits.
Dependencies are inferred from the claim text.