Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer
AssigneeAlps Electric Co., Ltd.
InventorsNaoya Hasegawa, Eiji Umetsu, Masamichi Saito, Yosuke Ide
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Abstract
A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the nonmagnetic metal layer overlap with each other, while each of the crystal structures is deformed. The deformations in the crystal structure of the first magnetic sublayer increase the magnetostriction constant, thereby increasing the magnetoelastic effect of the magnetic sensor.
Claims52
A magnetic sensor comprising:
- a nonmagnetic metal layer including at least one element selected from the group consisting of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al;
- a pinned magnetic layer including first and second magnetic sublayers with a nonmagnetic interlayer disposed therebetween, the first magnetic sublayer in contact with the non-magnetic metal layer;
- a free magnetic layer;
- and
- a nonmagnetic conductive layer disposed between the pinned magnetic layer and the free magnetic layer, the first magnetic sublayer disposed farthest from the nonmagnetic conductive layer,
- wherein crystals in the nonmagnetic metal layer and crystals in the first magnetic sublayer are oriented in an epitaxial or a heteroepitaxial state;
- and
- an end face of the pinned magnetic layer is open and is configured to oppose a face of a recording medium.
A magnetic sensor comprising:
- a nonmagnetic metal layer;
- a pinned magnetic layer including first and second magnetic sublayers with a nonmagnetic interlayer disposed therebetween, the first magnetic sublayer in contact with the non-magnetic metal layer;
- a free magnetic layer;
- and
- a nonmagnetic conductive layer disposed between the pinned magnetic layer and the free magnetic layer, the first magnetic sublayer disposed farthest from the nonmagnetic conductive layer,
- wherein the nonmagnetic metal layer and the first magnetic sublayer have crystalline lattices in which
- difference between a nearest interatomic distance of the nonmagnetic metal layer in a plane parallel to a first boundary between the nonmagnetic metal layer and the first magnetic sublayer and a nearest interatomic distance of the first magnetic sublayer of the pinned magnetic layer in the plane parallel to the first boundary divided by the nearest interatomic distance of the first magnetic sublayer is in the range of about 0.05 to 0.20, and
- an end face of the pinned magnetic layer is open and is configured to oppose a face of a recording medium.
A method of forming a magnetic sensor, the method comprising:
- providing a nonmagnetic metal layer including at least one element selected from the group consisting of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al;
- forming a pinned magnetic layer including first and second magnetic sublayers with a nonmagnetic interlayer disposed therebetween such that the first magnetic sublayer is in contact with the non-magnetic metal layer and crystals in the nonmagnetic metal layer and crystals in the first magnetic sublayer are oriented in an epitaxial or a heteroepitaxial state;
- forming a free magnetic layer;
- forming a nonmagnetic conductive layer disposed between the pinned magnetic layer and the free magnetic layer such that the first magnetic sublayer is disposed farthest from the nonmagnetic conductive layer;
- and
- opening an end face of the pinned magnetic layer, the end face being configured to oppose a face of a recording medium.
Dependencies are inferred from the claim text.