Semiconductor integrated device having reduced jitter and reduced current consumption
AssigneeSeiko Epson Corporation
InventorYasunari Furuya
Life of this patent
Estimating the term…
Loading patent…
AssigneeSeiko Epson Corporation
InventorYasunari Furuya
Estimating the term…
A structure is provided for significantly reducing the current excessively consumed for generating a high-speed clock signal necessary for signal processing, and significantly improve the jitter characteristics of the high-speed clock signal. The structure includes a reference-clock signal generation circuit, a time-base processing circuit, a PLL circuit, and a high-speed signal processing circuit. A low-speed reference-clock signal generated by the reference-clock signal generation circuit is provided to the PLL circuit. The PLL circuit generates a high-speed clock signal by multiplying the reference-clock signal by a factor of N. The factor N is at least 100. To reduce a jitter of the high-speed clock signal generated by the PLL circuit, a natural angular frequency ωn and a damping factor ζ that relate to the response characteristics of the system of the PLL circuit are set to range from 3 kHz to 10 kHz, and 0.01 or less, respectively.
A semiconductor integrated device, comprising:
A semiconductor integrated device, comprising:
Dependencies are inferred from the claim text.