Semiconductor electronic device and method of manufacturing thereof
AssigneeSTMicroelectronics S.r.l.
InventorsAntonio Andreini, Lorenzo Cerati, Paola Galbiati, Alessandra Merlini
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Abstract
A semiconductor electronic device is described comprising a die of semiconductor material having a plurality of contact pads electrically connected to a support for example through interposition of contact wires, said plurality of contact pads comprising signal pads and power pads, the device being characterized in that said signal pads are implemented on the die of semiconductor material with a mutual pitch lower than the pitch between said power pads.
Claims18
A semiconductor electronic device comprising a die of semiconductor material having a plurality of contact pads electrically connected to a support, said plurality of contact pads comprising signal pads and power pads, wherein said signal pads are implemented on the die of semiconductor material with a pitch narrower than a pitch between said power pads, wherein the pitch between the signal pads is less than 90 microns and the pitch between the power pads is equal or more than 90 microns.
A semiconductor electronic device comprising a die of semiconductor material having a plurality of contact pads electrically connected to a support, said plurality of contact pads comprising signal pads and power pads, wherein said signal pads are implemented on the die of semiconductor material with a pitch narrower than a pitch between said power pad, wherein said signal pads have a multilayer structure comprising metallic layers alternated by insulating material layers and upperly ending with a terminal metallic material layer.
A semiconductor electronic device comprising a die of semiconductor material having a plurality of contact pads electrically connected to a support, said plurality of contact pads comprising signal pads and power pads, wherein said signal pads are implemented on the die of semiconductor material with a pitch narrower than a pitch between said power pad, wherein said power pads have a multilayer structure comprising first metallic layers alternated by insulating material layers and upperly ending with a second terminal metallic material layer.
A semiconductor device comprising:
- a die of a semiconductor material;
- a support electrically connected to the die;
- a plurality of power pads, each power pad being separated from an adjacent power pad by a first pitch, said first pitch being defined as the shortest distance between two adjacent power pads;
- and
- a plurality of signal pads, each signal pad being separated from an adjacent signal pad by a second pitch, said second pitch being defined as the shortest distance between two adjacent signal pads;
- wherein, the first pitch is wider than the second pitch, and each power pad is higher than each signal pad.
A semiconductor device comprising:
- a die of semiconductor material;
- a plurality of first conductive stripes on a first region of the die, each first conductive stripe being separated from an adjacent one of the first conductive stripes by a first distance;
- a plurality of second conductive stripes on a second region of the die, each second conductive stripe being separated from an adjacent one of the second conductive stripes by a second distance;
- a plurality of insulating layers overlying each of the first and second conductive stripes;
- and
- a plurality of external conductive layers overlying the insulating layers that are overlying the first conductive stripes,
- wherein, the first distance is greater than the second distance, and each of the external conductive layer is more than 2 microns in thickness.
Dependencies are inferred from the claim text.