Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorYusuke Harada
Life of this patent
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Abstract
A semiconductor device is made up of a first insulating layer having a through hole; a first interconnection which comprises a first conductive layer, a first barrier layer, and a first main interconnection, and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, the semiconductor device can avoid a problem so that the Cu of the first main interconnection transfers from a portion connected to the second interconnection due to cause electromigration, the connected portion becomes a void, and the first interconnection is disconnected to the second interconnection.
Claims20
A semiconductor device comprising:
- a first insulating layer;
- a first interconnection material formed in a first groove within the first insulating layer, the first groove extending in a first direction and having a first width in a second direction that is substantially perpendicular with the first direction;
- a second insulating layer formed on the first insulating layer;
- a barrier layer formed in a second groove within the second insulating layer, the barrier layer extending from over an upper surface of the first interconnection material in the first insulating layer to at least one outer sidewall surface of the first interconnection material, wherein the second groove has an interconnection portion having a first length in the second direction and a contact portion formed between the interconnection portion and the first interconnection material, and wherein the contact portion has a second width in the second direction that is smaller than the first length and larger than the first width;
- and
- a second interconnection material formed on the barrier layer, the second interconnection material thereby extending from over the upper surface of the first interconnection material in the first insulating layer onto the at least one outer sidewall surface of the first interconnection material via the barrier layer.
Dependencies are inferred from the claim text.