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US 7,126,205 B2Granted
Devices having improved capacitance and methods of their fabrication
AssigneeMicron Technology, Inc.
InventorKarl M. Robinson
Life of this patent
Estimating the term…
Abstract
A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.
Claims32
A capacitor formed by a process comprising:
- forming a polysilicon layer on a substrate assembly such that the polysilicon layer directly contacts the substrate;
- forming a metal layer directly on the polysilicon layer;
- applying a potential across the metal layer;
- and
- oxidizing at least a portion of the metal layer such that the metal layer after oxidizing includes an oxidized portion and a non-oxidized portion, wherein the oxidized portion forms at least a portion of a dielectric layer of the capacitor, and wherein the polysilicon and the non-oxidized portion of the metal layer form a first capacitor plate;
- and
- forming a second capacitor plate such that the second capacitor plate directly contacts the oxidized portion of the metal layer.
4 more elements
A capacitor formed by a process comprising:
- forming a polysilicon layer on a starting substrate such that the polysilicon layer directly contacts the substrate
- forming a metal layer directly on the polysilicon layer;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer such that the metal layer after oxidizing includes an oxidized portion and a non-oxidized portion, wherein the oxidized portion forms at least a portion of a dielectric layer of the capacitor;
- and
- forming a metal capacitor plate such that the metal capacitor plate directly contacts the oxidized portion of the metal layer.
5 more elements
A capacitor formed by a process comprising:
- forming a polysilicon layer on a starting substrate such that the polysilicon layer directly contacts the substrate;
- forming a metal layer overlying the polysilicon layer, the starting substrate formed from silicon dioxide, the metal layer being formed from at least one metal selected from the group consisting of titanium, copper, gold, tungsten, and nickel, wherein the metal of the metal layer is alloyed with at least one additional metal selected from the group consisting of strontium, barium, and lead;
- contacting the metal layer with an electrolytic solution;
- applying a potential across the electrolytic solution and the metal layer;
- and
- oxidizing at least a portion of the metal layer such that the metal layer after oxidizing includes an oxidized portion and a non-oxidized portion, wherein the oxidized portion forms at least a portion of a dielectric layer of the capacitor, and wherein the polysilicon and the non-oxidized portion of the metal layer form a first capacitor plate;
- and
- forming a second capacitor plate such that the second capacitor plate directly contacts the oxidized portion of the metal layer.
5 more elements
A capacitor formed by a process comprising:
- forming a polysilicon layer on a substrate such that the polysilicon layer directly contacts the substrate;
- forming a metal layer directly on the polysilicon layer, the metal capacitor plate being formed from at least one metal selected from the group consisting of titanium, copper, gold, tungsten, and nickel, wherein the metal of the metal layer is alloyed with at least one additional metal selected from the group consisting of strontium, barium, and lead;
- applying a potential across the metal layer;
- and
- oxidizing at least a portion of the metal layer such that the metal layer after oxidizing includes an oxidized portion and a non-oxidized portion, wherein the oxidized portion forms at least a portion of the dielectric layer of the capacitor, and wherein the polysilicon and the non-oxidized portion of the metal layer form a first capacitor plate;
- and
- forming a second capacitor plate such that the second capacitor plate directly contacts the oxidized portion of the metal layer.
4 more elements
Dependencies are inferred from the claim text.