Metal-oxide-semiconductor device with enhanced source electrode

An integrated circuit (IC) device comprising a plurality of metal-oxide semiconductor (MOS) devices, at least one of the MOS devices comprising:

• a semiconductor layer of a first conductivity type;
• a first source/drain region of a second conductivity type formed in the semiconductor layer,
• a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region;
• a gate formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions;
• an implant region having a conductivity opposite the first source drain/region having a region proximate the upper surface of said semiconductor layer and extending laterally away from said gate;
• and
• at least one contact, the at least one contact comprising:
• a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate;
• and
• at least one insulating layer formed directly on the silicide layer;
• wherein substantially all current associated with the first source/drain region passes through the silicide layer in a direction from the first source/drain region to said implant region.