Capacitor constructions

A DRAM comprising:

• a transistor device electrically coupled with a capacitor construction, the capacitor comprising:
• a first capacitor electrode, the first capacitor electrode comprising conductively-doped silicon;
• a dielectric layer proximate the first capacitor electrode, the dielectric layer comprising aluminum oxide;
• a second capacitor electrode across the dielectric layer from the first capacitor electrode;
• and
• a metal-containing material between the conductively-doped silicon of the first capacitor electrode and the dielectric layer, the metal-containing material having a thickness of less than or equal to about 20 Å and being physically against the aluminum oxide.

An electronic system comprising:

• a processor;
• a memory device electrically coupled with the processor;
• and
• wherein the memory device includes a DRAM unit cell comprising a transistor device electrically coupled with a capacitor construction, the capacitor comprising:
• a first capacitor electrode, the first capacitor electrode comprising conductively-doped silicon;
• a dielectric layer proximate the first capacitor electrode, the dielectric layer comprising aluminum oxide;
• a second capacitor electrode across the dielectric layer from the first capacitor electrode;
• and
• a metal-containing material between the conductively-doped silicon of the first capacitor electrode and the dielectric layer, the metal-containing material having a thickness of less than or equal to about 20 Å and being physically against the aluminum oxide.