Semiconductor device including a capacitor having improved structural stability and enhanced capacitance, and method of manufacturing the semiconductor device

Abstract

In a method of manufacturing a semiconductor device including a capacitor having improved structural stability and enhanced capacitance, a contact region is formed on a surface portion of a semiconductor substrate. After a mold layer is formed on the substrate, a stabilizing member is formed to encompass a storage electrode. A contact hole is formed through the mold layer to expose a sidewall of the stabilizing member and the contact region. The storage electrode is formed on the exposed contact region and on the exposed sidewall of the stabilizing member. A dielectric layer and a plate electrode are successively formed on the storage electrode. The capacitor including the storage electrode and the stabilizing member will have improved structural stability that resists mechanical collapse even when the capacitor has an extremely high aspect ratio.

Dependencies are inferred from the claim text.