Back to results
US 7,126,177 B2Granted
Semiconductor memory device, semiconductor device, and method for production thereof
AssigneeSony Corporation
InventorsYuzo Fukuzaki, Hiroshi Takahashi
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSony Corporation
InventorsYuzo Fukuzaki, Hiroshi Takahashi
Estimating the term…
Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a reduced area for the cell array. The semiconductor memory device is composed of a substrate having trenches formed side by side, a plate electrode which is formed to a prescribed depth from the surface of the inner wall of the trench, a capacitor insulating film which covers the surface of the inner wall of the trench, a memory node electrode MN which fills the trench, with the capacitor insulating film interposed between them, and a memory node contact plug which is buried in a contact hole which is so made as to reach the memory node electrode from the surface of the semiconductor layer. A metallized region is integrally formed to connect at least part of the surface of the semiconductor layer and at least part of the surface of the contact plug to each other.
A semiconductor memory device composed of a plurality of memory cells arranged therein, each memory cell consisting of a memory capacitor with a memory node electrode and a transistor, said semiconductor memory device comprising:
Dependencies are inferred from the claim text.