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US 7,126,161 B2Granted
Semiconductor device having El layer and sealing material
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.
Claims46
A semiconductor device comprising:
- a substrate;
- a first thin film transistor for a driver circuit and a second thin film transistor for a pixel portion formed on an insulating surface over the substrate, wherein the second thin film transistor includes a wiring formed on the insulating surface;
- at least one insulating film formed over the second thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the second thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer;
- a sealing material provided over the substrate and covering the first thin film transistor, the second thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
5 more elements
A semiconductor device comprising:
- a substrate;
- a first thin film transistor for a driver circuit and a second thin film transistor for a pixel portion formed on an insulating surface over the substrate, wherein the second thin film transistor includes a wiring formed on the insulating surface;
- at least one insulating film made of a resin formed over the second thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the second thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer;
- a sealing material provided over the substrate and covering the first thin film transistor, the second thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
5 more elements
A semiconductor device comprising:
- a substrate;
- a thin film transistor having a wiring formed on an insulating surface over the substrate;
- at least one insulating film formed over the thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer;
- a sealing material provided over the substrate and covering the thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
5 more elements
A semiconductor device comprising:
- a substrate;
- a thin film transistor having a wiring formed on an insulating surface over the substrate;
- at least one insulating film made of a resin formed over the thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer;
- a sealing material provided over the substrate and covering the thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
5 more elements
A semiconductor device comprising:
- a substrate;
- a first thin film transistor for a driver circuit and a second thin film transistor for a pixel portion formed on an insulating surface over the substrate;
- at least one insulating film formed over the second thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the second thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer, wherein the second electrode is electrically connected to a wiring formed on the insulating surface;
- and
- a sealing material provided over the substrate and covering the first thin film transistor, the second thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
6 more elements
A semiconductor device comprising:
- a substrate;
- a thin film transistor formed on an insulating surface over the substrate;
- at least one insulating film formed over the thin film transistor;
- a pixel electrode formed over the insulating film and electrically connected to the thin film transistor;
- an EL layer formed over the pixel electrode;
- a second electrode formed over the EL layer, wherein the second electrode is electrically connected to a wiring formed on the insulating surface;
- and
- a sealing material provided over the substrate and covering the thin film transistor, the insulating film, the pixel electrode, the EL layer and the second electrode,
- wherein the sealing material is fixed to the substrate by an adhesive and the adhesive is directly in contact with the wiring on the insulating surface.
6 more elements
Dependencies are inferred from the claim text.