Thin film transistor display device with integral control circuitry

A semiconductor device comprising:

• an electroluminescence element;
• a pixel region in which a plurality of thin film transistors are arranged in matrix;
• a picture signal supply source for supplying a picture signal;
• a switching circuit connected to a source signal line and a plurality of voltage lines for selecting at least one of said voltage lines;
• a latch circuit for supplying said picture signal from said picture signal supply source to said switching circuit;
• a memory for storing data used in gamma correction of a voltage applied to said at least one of said voltage lines;
• and
• a gamma correction control circuit for adjusting said voltage based on said data to carry out said gamma correction of said voltage,
• wherein said plurality of thin film transistors and said memory and said gamma correction control circuit are provided over a same insulating surface.

A semiconductor device comprising:

• an active layer provided over a substrate;
• a source region and a drain region provided in said active layer;
• and
• a floating gate provided adjacent to said active layer with a gate insulating film therebetween,
• wherein said source region and said drain region contain a P type impurity,
• wherein mobility of said semiconductor device is 100 to 300 cm2/Vs, and
• wherein said active layer has a thickness of 10 to 100 nm.

A semiconductor device comprising:

• an active layer provided over a substrate;
• a source region and a drain region provided in said active layer;
• a floating gate provided adjacent to said active layer with a gate insulating film therebetween;
• and
• an insulating film comprising an organic resin provided over said floating gate to provide a leveled upper surface over said floating gate,
• wherein said source region and said drain region contain a P type impurity,
• wherein mobility of said semiconductor device is 100 to 300 cm2/Vs, and
• wherein said active layer has a thickness of 10 to 100 nm.

A semiconductor device comprising:

• a pixel region in which a plurality of thin film transistors are arranged in matrix;
• a picture signal supply source for supplying a picture signal;
• a switching circuit connected to a plurality of voltage lines for selecting at least one of said voltage lines;
• a latch circuit for supplying said picture signal from said picture signal supply source to said switching circuit;
• a gamma correction control circuit for adjusting a voltage applied to said at least one of said voltage lines,
• wherein said plurality of thin film transistors and said gamma correction control circuit are provided over a same insulating surface.

A semiconductor device comprising:

• an electroluminescence element;
• a pixel region in which a plurality of thin film transistors are arranged in matrix;
• a picture signal supply source for supplying a picture signal;
• a switching circuit connected to a plurality of voltage lines for selecting at least one of said voltage lines;
• a latch circuit for supplying said picture signal from said picture signal supply source to said switching circuit;
• a gamma correction control circuit for adjusting a voltage applied to said at least one of said voltage lines,
• wherein said plurality of thin film transistors and said gamma correction control circuit are provided over a same insulating surface.

A semiconductor device comprising:

• a pixel region in which a plurality of thin film transistors are arranged in matrix;
• a picture signal supply source for supplying a picture signal;
• a switching circuit connected to a plurality of voltage lines for selecting at least one of said voltage lines;
• a latch circuit for supplying said picture signal from said picture signal supply source to said switching circuit;
• a memory for storing data used in gamma correction of a voltage applied to said at least one of said voltage lines;
• a gamma correction control circuit for adjusting said voltage based on said data to carry out said gamma correction of said voltage,
• wherein said plurality of thin film transistors and said memory and said gamma correction control circuit are provided over a same insulating surface.

A semiconductor device comprising:

• an electroluminescence element;
• a pixel region in which a plurality of thin film transistors are arranged in matrix;
• a picture signal supply source for supplying a picture signal;
• a switching circuit connected to a plurality of voltage lines for selecting at least one of said voltage lines;
• a latch circuit for supplying said picture signal from said picture signal supply source to said switching circuit;
• a memory for storing data used in gamma correction of a voltage applied to said at least one of said voltage lines;
• a gamma correction control circuit for adjusting said voltage based on said data to carry out said gamma correction of said voltage,
• wherein said plurality of thin film transistors and said memory and said gamma correction control circuit are provided over a same insulating surface.