Organic transistor

An organic transistor comprising:

• a source electrode and a drain electrode, which counter each other;
• an organic semiconductor layer prepared between the source electrode and the drain electrode;
• a plurality of gate electrodes shaped like one of a comb and a mesh, the gate electrodes being prepared with intervals between adjacent gate electrodes approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode;
• and
• an electron hole injecting layer between the drain electrode and the organic semiconductor layer that consists of the p-type semiconductor materials,
• wherein the organic semiconductor layer comprises an electric field luminescent organic semiconductor material,
• wherein when the organic semiconductor layer is formed of a first conductivity-type electric field luminescent organic semiconductor material, one of the source electrode and the drain electrode is made of a transparent electrode material, and when the organic semiconductor layer is formed of a second conductivity-type electric field luminescent organic material, the other of the source electrode and the drain electrode is made of a transparent electrode material, and
• wherein the drain electrode, the organic semiconductor layer, and the source electrode are formed one by one in this sequence on the upper surface of a transparent substrate, the organic semiconductor layer comprising a p-type semiconductor material, and the drain electrode comprising a transparent electrode material.

An organic transistor comprising:

• a source electrode and a drain electrode, which counter each other;
• an organic semiconductor layer prepared between the source electrode and the drain electrode;
• a plurality of gate electrodes shaped like one of a comb and a mesh, the gate electrodes being prepared with intervals between adjacent gate electrodes approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode;
• and
• an electron hole injecting layer between the drain electrode and the organic semiconductor layers,
• wherein the organic semiconductor layer comprises an electric field luminescent organic semiconductor material,
• wherein when the organic semiconductor layer is formed of a first conductivity-type electric field luminescent organic semiconductor material, one of the source electrode and the drain electrode is made of a transparent electrode material, and when the organic semiconductor layer is formed of a second conductivity-type electric field luminescent organic material, the other of the source electrode and the drain electrode is made of a transparent electrode material, and
• wherein the source electrode, the organic semiconductor layer, and the drain electrode are formed one by one in this sequence on the upper surface of a transparent substrate, the organic semiconductor layer comprising an n-type semiconductor material, and the source electrode comprising a transparent electrode material.

An organic transistor comprising:

• a source electrode and a drain electrode, which counter each other;
• an organic semiconductor layer prepared between the source electrode and the drain electrode;
• a plurality of gate electrodes shaped like one of a comb and a mesh, the gate electrodes being prepared with intervals between adjacent gate electrodes approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode;
• and
• an electron hole injecting layer between the drain electrode and the organic semiconductor 1ayer,
• wherein the organic semiconductor layer comprises an electric field luminescent organic semiconductor material,
• wherein, when the organic semiconductor layer is formed of a first conductivity-type electric field luminescent organic semiconductor material, one of the source electrode and the drain electrode is made of a transparent electrode material, and when the organic semiconductor layer is formed of a second conductivity-type electric field luminescent organic material, the other of the source electrode and the drain electrode is made of a transparent electrode material, and
• wherein the source electrode, the organic semiconductor layer, and the drain electrode are formed one by one in this sequence on the upper surface of a substrate, the organic semiconductor layer comprising a p-type semiconductor material, and the drain electrode comprising a transparent electrode material.

An organic transistor comprising:

• a source electrode and a drain electrode, which counter each other;
• an organic semiconductor layer prepared between the source electrode and the drain electrode;
• a plurality of gate electrodes shaped like one of a comb and a mesh, the gate electrodes being prepared with intervals between adjacent gate electrodes approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode;
• and
• an electron hole injecting layer between the drain electrode and the organic semiconductor layer,
• wherein the organic semiconductor layer comprises an electric field luminescent organic semiconductor material,
• wherein when the organic semiconductor layer is formed of a first conductivity-type electric field luminescent organic semiconductor material, one of the source electrode and the drain electrode is made of a transparent electrode material, and when the organic semiconductor layer is formed of a second conductivity-type electric field luminescent organic material, the other of the source electrode and the drain electrode is made of a transparent electrode material, and
• wherein the drain electrode, the organic semiconductor layer, and the source electrode are formed one by one in this sequence on the upper surface of a substrate, the source electrode comprising a transparent electrode material, and the organic semiconductor layer comprising an n-type semiconductor material.

An organic transistor comprising a source electrode and a drain electrode, which counter each other, an organic semiconductor layer prepared between the source electrode and the drain electrode, and a plurality of gate electrodes shaped like one of a comb and a mesh, the gate electrodes being prepared with intervals between adjacent gate electrodes approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode,

• wherein the organic semiconductor layer comprises an electric field luminescent organic semiconductor material,
• wherein when the organic semiconductor layer is formed of a first conductivity-type electric field luminescent organic semiconductor material, one of the source electrode and the drain electrode is made of a transparent electrode material, and when the organic semiconductor layer is formed of a second conductivity-type electric field luminescent organic material, the other of the source electrode and the drain electrode is made of a transparent electrode material, and
• wherein the organic semiconductor layer and the source electrode are formed one by one in this sequence on the upper surface of a substrate, and the drain electrode is formed on the undersurface of the substrate, the source electrode comprising a transparent electrode material, and the organic semiconductor layer comprising an n-type electric field luminescent organic semiconductor material.