Electron flood apparatus and ion implantation system
AssigneeApplied Materials, Inc.
InventorsHiroyuki Ito, Yasuhiko Matsunaga, Hiroji Hanawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsHiroyuki Ito, Yasuhiko Matsunaga, Hiroji Hanawa
Estimating the term…
An electron flood apparatus 1 of the present invention comprises a chamber 22 having a first part 22a made of conductive material and a second part 22b made of insulating material, and extending along a predefined closed curve Ax. A coil 18 is provided outside the first part 22a to generate a magnetic field in a direction intersecting with the surface formed by the predefined closed curve Ax. The coil 18 and the chamber 22 are inductively coupled by the magnetic field. Since the inert gas plasma is generated in the chamber 22 mainly by inductive coupling, electrons contained in the plasma have a low energy. Here, by applying voltage to an electrode 21, electrons having a low energy in the chamber 22 are emitted from an opening 14.
An electron flood apparatus for use in an ion implantation system for generating electrons, said apparatus comprising:
An electron flood apparatus for use in an ion implantation system for generating electrons, said apparatus comprising:
An ion implantation system comprising:
Dependencies are inferred from the claim text.