An image pick-up apparatus, in which a plurality of pixels, each comprising a pair of a semiconductor conversion elements for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to said semiconductor conversion element, is arranged in a two-dimensional manner on a substrate, said image pick-up apparatus including gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on said substrate,
- wherein a protection layer is arranged so as to cover said thin film transistors, said gate wiring and said signal wiring, and
- the protection layer is removed from at least a part or whole of a region in which a through hole and the semiconductor conversion element are formed and,
- wherein said protection layer has a multilayer configuration composed of a plurality of kinds selected from the group consisting of an SiO2 film, an SiNx film and an SiON film.