Photoelectric conversion device and camera using photoelectric conversion device

A photoelectric conversion device including pixels arranged in an array, each of said pixels comprising:

• a light receiving region for converting light to signal charge;
• transistors including an amplifying transistor for amplifying the signal charges to output the amplified signal charges;
• an insulation film made of a silicon oxide film and arranged on a surface of said light receiving region and under gate electrodes of said transistors;
• and
• a multi-layer wiring structure,
• wherein an interlayer insulation film made of a silicon oxide film is arranged between the gate electrodes of said transistors and wiring for insulating said gate electrodes and said wiring;
• and
• a first reflection prevention film made of a silicon nitride film,
• wherein said first reflection prevention film is arranged at least above said light receiving region, with said insulation film arranged between said first reflection prevention film and said light receiving region,
• wherein a second reflection prevention film made of a silicon oxide nitride film is laminated between said first reflection prevention film and said interlayer insulation film, and
• film thicknesses of said insulation film arranged both on said surface of said light receiving region and under said gate electrodes of said transistors are different from each other.