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US 7,126,052 B2Granted
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
AssigneeThe Boeing Company
InventorsChristopher M. Fetzer, James H. Ermer, Richard R. King, Peter C. Cotler
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Abstract
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
Claims34
An optoelectronic device, comprising:
- a substrate;
- an isoelectronic surfactant-induced, lattice disordered top layer disposed over said substrate;
- wherein said top layer is lattice matched to said substrate;
- wherein said top layer is characterized by an ordering parameter η that is at most about 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
-
- K
- 471
- ;
- wherein said top layer has a band gap of about 1.9 eV;
- wherein Epeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as an optoelectronic device.
18 more elements
A solar cell having a GaInP top layer, comprising:
- a lower structure;
- a subsequent structure disposed over said lower structure, said subsequent structure comprising said top layer;
- wherein said top layer has an isoelectronic surfactant;
- wherein said isoelectronic surfactant induces lattice disorder in said top layer without changing the composition or the lattice constant of said top layer;
- wherein said top layer is selected from the group consisting of Ga0.505In0.495P and Ga0.515In0.485P;
- wherein said top layer is characterized by an ordering parameter η that is between about 0.0 to 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
-
- K
- 471
- ;
- wherein said top layer has a band gap of about 1.9 eV;
- wherein Epeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as a solar cell.
20 more elements
An optoelectronic device, comprising:
- a Ge substrate;
- and
- a lattice disordered Ga0.505In0.495P top layer disposed over said substrate;
- wherein said top layer is lattice-matched to said substrate;
- wherein said top layer includes Sb as an isoelectronic surfactant, and wherein said isoelectronic surfactant induces said lattice disorder in said Ga0.505In0.495P top layer;
- wherein said top layer is characterized by an ordering parameter η that is at most about 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
-
- K
- 471
- ;
- wherein Epeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as an optoelectronic device.
19 more elements
An optoelectronic device, comprising:
- a GaAs substrate;
- and
- a lattice disordered Ga0.515In0.485P top layer disposed over said substrate;
- wherein said top layer is lattice-matched to said substrate;
- wherein said top layer includes Sb as an isoelectronic surfactant, and wherein said isoelectronic surfactant induces said lattice disorder in said Ga0.515In0.485P top layer;
- wherein said top layer in the solid state is characterized by the formula Ga0.515In0.485P1-xSbx;
- wherein x is between about 0.00001 to 0.01;
- wherein said top layer is characterized by an ordering parameter η that is at most about 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
-
- K
- 471
- ;
- wherein Epeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as an optoelectronic device.
21 more elements
A multi-junction solar cell, comprising;
- a Ge subcell as a bottom subcell;
- a Ga(In)As subcell as a middle subcell disposed above and connected in electrical series with said bottom subcell;
- and
- a GaInP subcell as a top subcell disposed above and connected in electrical series with said middle subcell;
- wherein said top subcell is lattice-matched with said bottom subcell;
- wherein said top subcell is lattice disordered, wherein said top subcell includes Sb as a isoelectronic surfactant, and wherein said isoelectronic surfactant induces said lattice disorder;
- wherein said top subcell in the solid state is characterized by the formula Ga0.505In0.495P;
- wherein said top subcell is characterized by an ordering parameter η that is at most about 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
- K
- 471
- and a band gap of about 1.89 eV;
- wherein Epeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as a multi-junction solar cell.
20 more elements
An optoelectronic device, comprising:
- a GaAs substrate;
- and
- a lattice disordered GaInP top cell disposed over said substrate;
- wherein said top cell is lattice-matched to said substrate;
- wherein said top cell includes Tl as an isoelectronic surfactant, and wherein said isoelectronic surfactant induces said lattice disorder in said GaInP top cell;
- wherein said top cell in the solid state is characterized by the formula (Ga0.515In0.485)1-xTlxP, wherein x is between about 1×10−8 to 1×10−3;
- wherein said top cell is characterized by an ordering parameter η that is at most about 0.1 where
- η
- =
- 2005
- -
- E
- peak
- ,
- 12
-
- K
- 471
- and a band gap of about 1.9 eV;
- wherein Rpeak, 12K is the measured photoluminescence peak energy measured in meV at 12K;
- and
- wherein the device functions as an optoelectronic device.
19 more elements
Dependencies are inferred from the claim text.