Back to results
US 7,125,813 B2Granted
Method of depositing low K barrier layers
AssigneeApplied Materials, Inc.
InventorsLi-Qun Xia, Ping Xu, Louis Yang
Life of this patent
Estimating the term…
Abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
Claims5
A method for depositing a silicon carbide layer on a substrate, comprising:
- introducing a processing gas comprising an organosilicon compound into a processing chamber containing the substrate therein, wherein the organosilicon compound has the formula SiHa(CH3)b(C6B5)c, wherein c is 2 and a+b+c=4;
- and
- reacting the organosilicon compound to deposit the silicon carbide layer on the substrate.
Dependencies are inferred from the claim text.