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AssigneeTokyo Electron Limited
InventorsTakeshi Kumagai, Hitoshi Katoh, Jinsu Lee, Shingo Maku
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A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.
A thermal CVD method of forming an insulating film, consisting essentially of a film selected from the group consisting of a silicon oxide film, silicon nitride film, and silicon oxynitride film, the method comprising:
A thermal CVD method of forming an insulating film consisting essentially of a silicon nitride film simultaneously on a plurality of target substrates stacked with a gap therebetween in a process chamber, the method comprising:
Dependencies are inferred from the claim text.