Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• preparing a substrate having an electrical connection portion formed by a semiconductor process on at least one surface of front and back surfaces of the substrate;
• forming at least one through hole through the substrate at a predetermined position;
• forming an insulating layer of an organic material on at least an inside surface of the through hole;
• and
• forming an electroconductive layer on at least an inside surface of the insulating layer to be electrically connected to the electrical connection portion, whereby the electrical connection portion is electrically connected to a side of the other surface of the substrate, wherein the through hole is formed by laser machining.

A method manufacturing a semiconductor device, comprising:

• preparing a substrate having an electrical connection portion formed by a semiconductor process on at least one surface of front and back surfaces of the substrate;
• forming at least one through hole through the substrate at a predetermined position;
• forming an insulating layer of an organic material on at least an inside surface of the through hole;
• and
• forming an electroconductive layer on at least an inside surface of the insulating layer to be electrically connected to the electrical connection portion, whereby the electrical connection portion is electrically connected to a side of the other surface of the substrate, wherein a space inside the electroconductive layer in the through hole is filled with a filling material and the filing material is an insulating material, and wherein the substrate is a semiconductor substrate, and wherein filling of the through hole with the filling material is performed by:
• a step of placing the substrate in a vacuum atmosphere;
• a step of closing one of opening ends of the through hole;
• a step of applying the filling material to a position corresponding to the other opening end in a surface level of the substrate;
• and
• a step of pressuring the filling material from the other end of the through hole.

A method of manufacturing a semiconductor device, comprising:

• preparing a substrate having an electrical connection portion formed on at least one surface of front and back surfaces of the substrate by a semiconductor process;
• forming at least one through hole through the substrate at a predetermined position;
• forming an insulating layer of an organic material on at least an inside surface of the through hole;
• forming an electroconductive layer on at least an inside surface of the insulating layer to be electrically connected to the electrical connection portion to establish an electrical connection between the electrical connection portion and a side of the other surface of the substrate;
• and
• cutting the substrate so that the through hole is bisected to form a groove in a side surface of the cut substrate.