Methods for making nearly planar dielectric films in integrated circuits

A method of forming a nearly planar dielectric film on a metal layer, comprising:

• forming a metal layer having a predetermined maximum feature spacing;
• forming an oxide layer on the metal layer using a TEOS-based procedure;
• facet-etching the oxide layer;
• and
• reflowing at least a portion of the oxide layer,
• wherein forming the oxide layer comprises forming a portion of the oxide layer using a TEOS-based procedure at a first deposition rate and forming a portion of the oxide layer using a TEOS-based procedure at a second deposition rate which is less than the first deposition raze.

A method of forming a nearly planar dielectric film on a metal layer, comprising:

• forming a metal layer having a predetermined maximum feature spacing;
• forming an, oxide layer on the metal layer using a TEOS-base procedure;
• facet-etching the oxide layer;
• and
• reflowing at least a portion of the oxide layer,
• wherein forming the oxide layer comprises forming a portion of the oxide layer using a TEOS-based procedure at a first deposition rate having a tendency to form voids and forming a portion of the oxide layer using a TEOS-based procedure at a second deposition rate having a tendency to form substantially no voids or fewer voids than the first deposition rate.

A method comprising:

• forming a metal layer having a predetermined maximum feature spacing of 0.3 microns;
• forming a first oxide layer using a TEOS-based procedure at a first deposition rate on the metal layer;
• forming a second oxide layer on the first oxide layer using a TEOS-based procedure at a second deposition rate which is less than the first deposition rate;
• and
• facet etching the second oxide layer.

A method comprising:

• forming a metal layer;
• depositing a film resistant to lateral etching on the metal layer;
• etching the metal layer to form a metal pattern having a predetermined maximum feature spacing of 0.3 microns;
• forming a first oxide layer using a TEOS-based procedure at a first deposition rate on the metal pattern;
• forming a second oxide layer on the first oxide layer using a TEOS-based procedure at a second deposition rate which is less than the first deposition rate;
• and
• facet etching the second oxide layer.