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US 7,125,799 B2Granted
Method and device for processing substrate, and apparatus for manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsShintaro Aoyama, Masanobu Igeta, Hiroshi Shinriki, Tsuyoshi Takahashi
Life of this patent
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Abstract
A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.
Claims18
A substrate processing method, comprising:
- removing carbon from a silicon substrate surface by irradiating ultraviolet radiation of a first wavelengths;
- and
- planarizing said silicon substrate surface by applying thereto a thermal annealing process,
- said step of removing carbon being conducted by causing an inert gas to flow to said silicon substrate and activating said silicon substrate surface with said ultraviolet radiation of said first wavelength,
- wherein said first wavelength is chosen such that said ultraviolet radiation of said first wavelength does not cause activation of said inert gas.
2 more elements
Dependencies are inferred from the claim text.