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US 7,125,797 B2Granted
Contact structure of semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-young Kim, Byoung-lyong Choi, Eun-kyung Lee
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Abstract
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
Claims14
A contact structure of a semiconductor, comprising:
- a substrate;
- a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate;
- a conductive layer formed on the conductive doping layer;
- and
- an insulation doping layer formed under the conductive doping layer in the substrate.
2 more elements
A method of making a contact structure of a semiconductor device, comprising:
- forming an insulating layer on a substrate and removing a portion of the insulating layer to expose a portion of the substrate;
- forming a conductive doping layer and an insulation doping layer in the substrate through the exposed portion of the substrate, the insulation doping layer being formed under the conductive doping layer;
- and
- forming a conductive layer on the conductive doping layer.
1 more element
Dependencies are inferred from the claim text.