Method of manufacturing semiconductor device
AssigneeRenesas Technology Corp.
InventorsSeiichi Kondo, Kaori Misawa, Shunichi Tokitoh, Takashi Nasuno
Life of this patent
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Abstract
A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.
Claims9
A method of manufacturing a semiconductor device comprising:
- depositing a first CVD dielectric layer on a surface of a semiconductor substrate;
- depositing a first low-k layer on the first CVD dielectric layer from source materials and, immediately after depositing the first low-k layer, thermally treating the first low-k layer;
- depositing a second low-k layer on the first low-k layer from the same source materials used to deposit the first low-k layer and, immediately after depositing the second low-k layer, thermally treating the second low-k layer;
- depositing a second CVD dielectric layer on the second low-k layer;
- forming a groove in the second CVD dielectric layer, the second low-k layer, and the first low-k layer;
- depositing a metal layer on the second CVD dielectric layer and filling the groove;
- and
- removing the metal layer from the second CVD dielectric layer by chemical mechanical polishing.
Dependencies are inferred from the claim text.