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US 7,125,793 B2Granted
Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material
AssigneeIntel Corporation
InventorsHuey-Chiang Liou, Wang Yueh
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Abstract
A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.
Claims15
A method for forming an opening for an interconnect structure comprising:
- depositing a dielectric layer having a photosensitive dielectric material;
- selectively subjecting the dielectric layer to radiation;
- curing the dielectric to define in the dielectric layer a region of a harder dielectric material adjacent a softer dielectric material in response to the selective subjecting of the dielectric layer to radiation;
- and
- etching an opening in the region having sidewalls of the harder dielectric material.
2 more elements
A method for forming an opening for an interconnect structure comprising:
- depositing a dielectric layer comprising a matrix material and a negative tone porogen;
- defining a first regionin a layer by exposing it to radiation;
- leaving the exposed dielectric layer such that the first region is surrounded by a harder dielectric material as a result of the exposing the first region to radiation;
- etching the first region with a mastk which defines an opening larger than the first region, thereby forming sidewalls in the opening of an unexposed second region of the dielectric layer.
1 more element
Dependencies are inferred from the claim text.