Method for forming hybrid device gates
AssigneeIntegrated Device Technology, Inc.
InventorsKuilong Wang, Tsengyou Syau, Jeong Choi
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Abstract
A method for forming self-aligned contact devices in a core region of a semiconductor substrate and non-self-aligned contact devices in a non-core region of the semiconductor substrate is disclosed in which a single gate film stack is used for forming gate structures in both the core region and in the non-core region. A dielectric layer is formed over a semiconductor substrate and a gate film stack is formed over the dielectric layer. The gate film stack is then patterned so as to form gate structures within both the core region and the non-core region.
Claims12
A method for forming self-aligned contact devices in a first region of a semiconductor substrate and non-self-aligned contact devices in a second region of said semiconductor substrate comprising:
- forming a dielectric layer that extends within said first region and within said second region;
- forming a gate film stack that includes a gate layer and that includes a dielectric film that overlies said gate layer, said gate film stack extending within said first region and within said second region;
- and
- patterning said gate film stack, using a first etch mask that covers portions of said first region and more than half of said second region, and using a second etch mask that covers all of said first region and portions of said second region, to define gate structures in said first region and in said second region.
A method for forming self-aligned contact devices in a first region of a semiconductor substrate and non-self-aligned contact devices in a second region of said semiconductor substrate comprising:
- forming a dielectric layer that extends within said first region and within said second region;
- forming a single gate film stack that includes a gate layer and that includes a dielectric film that overlies said gate layer, said single gate film stack extending within said first region and within said second region;
- and
- patterning said single gate film stack so to form gate structures in said first region and in said second region, said patterning said single gate film stack further including:
- performing a first selective etch, using a first etch mask that covers more than half of said second region and that covers portions of said first region, so as to remove that portion of said dielectric film that is not covered by said first etch mask;
- performing a second selective etch so as to remove those portions of said gate layer that are not covered by remaining dielectric film;
- removing that portion of said dielectric film that extends within said second region using a second etch mask;
- depositing an anti-reflective coating;
- and
- performing an etch, using a third etch mask, so as to form said gate structures in said second region.
A method for forming self-aligned contact devices in a first region of a semiconductor substrate and non-self-aligned contact devices in a second region of said semiconductor substrate comprising:
- forming a dielectric layer that extends within said first region and within said second region;
- forming a single gate film stack that includes a gate layer and that includes a dielectric film that overlies said gate layer, said single gate film stack extending within said first region and within said second region;
- and
- patterning said single gate film stack so to form gate structures in said first region and in said second region, by performing a first selective etch using a first etch mask that covers portions of said first region and does not cover any of said second region so as to remove all of said dielectric film in said second region and to remove those portions of said dielectric film in said first region that are not covered by said first etch mask and by performing a second selective etch, using a second etch mask that covers portions of said second region and that does not cover any of said first region, so as to remove those portions of said gate layer that are not covered by said dielectric film or said second etch mask.
Dependencies are inferred from the claim text.