Nonvolatile memory

A method for forming a pair of memory cells capable of functioning as non-volatile memory cells, comprising:

• defining a pair of spaced apart floating gates over a substrate;
• forming a stacked control gate over each floating gate;
• and
• forming a drain and a pair of sources by implantation using said stacked control gates as a mask, so that substrate electrons are supplied from one of the pair of sources of a first memory cell through an underlying channel of a second memory cell along a path from the one of the pair of sources to the underlying channel, wherein a width of the path is greater than a width of one of the pair of memory cells.