Semiconductor device and method for manufacturing same
AssigneeNEC Electronics Corporation
InventorIchiro Yamamoto
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Abstract
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
Claims9
A method for manufacturing a semiconductor device comprising a capacitor of MIM (Metal Insulator Metal) structure comprising a lower electrode and an upper electrode each made up of a metal film, and a capacitor insulating film sandwiched between said lower electrode and said upper electrode, the method comprising:
- forming said lower electrode;
- forming said capacitor insulating film on said lower electrode, said capacitor insulating film comprising an amorphous dielectric film having a composition of AlXZr(1-X)Oy by a first compound containing metal atoms having a tendency to form a crystalline dielectric, an oxidizing agent, and a second compound containing aluminum atoms;
- and
- forming said upper electrode on said capacitor insulating film, thereby forming said capacitor of said MIM structure.
Dependencies are inferred from the claim text.