Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device

A laser irradiation method comprising the steps of;

• shaping a first pulsed laser beam having a wavelength not longer than that of visible light into a long beam on a surface, and
• moving the surface in a first direction relative to the long beam while irradiating a second laser beam having a fundamental wave into the surface so as to overlap with a region irradiated with the first pulsed laser beam at the same time as the first pulsed laser beam,
• wherein the energy of the second laser beam is modulated in synchronization with a pulse oscillation of the first pulsed laser beam, and
• wherein a net energy of the first pulsed laser beam and the second laser beam absorbed in the surface per unit time is controlled to be constant.

A method for manufacturing a semiconductor device comprising the steps of;

• forming a semiconductor film over a substrate,
• shaping a first pulsed laser beam having a wavelength not longer than that of visible light into a long beam on a surface of the semiconductor film, and
• moving the substrate in a first direction relative to the long beam while irradiating a second laser beam having a fundamental wave into the semiconductor film so as to overlap with a region irradiated with the first pulsed laser beam at the same time as the first pulsed laser beam,
• wherein the energy of the second laser beam is modulated in synchronization with a pulse oscillation of the first pulsed laser beam.

A method for manufacturing a semiconductor device comprising the steps of;

• forming a semiconductor film over a substrate,
• shaping a first pulsed laser beam having a wavelength not longer than that of visible light into a long beam on a surface of the semiconductor film, and
• moving the substrate in a first direction relative to the long beam while irradiating a second laser beam having a fundamental wave into the surface of the semiconductor film so as to overlap with a region irradiated with the first pulsed laser beam at the same time as the first pulsed laser beam,
• wherein the energy of the second laser beam is modulated in synchronization with a pulse oscillation of the first pulsed laser beam, and
• wherein a net energy of the first pulsed laser beam and a second laser beam absorbed in the semiconductor film per unit time is controlled to be constant.

A method for manufacturing a semiconductor device comprising the steps of;

• forming a semiconductor film over a substrate,
• shaping a first pulsed laser beam having a wavelength which is absorbed in the semiconductor film into a long beam on a surface of the semiconductor film, and
• moving the substrate in a first direction relative to the long beam while irradiating a second laser beam having a fundamental wave into the semiconductor film so as to overlap with a region irradiated with the first pulsed laser beam at the same time as the first pulsed laser beam,
• wherein the energy of the second laser beam is modulated in synchronization with a pulse oscillation of the first pulsed laser beam.

A method for manufacturing a semiconductor device comprising the steps of;

• forming a semiconductor film over a substrate,
• shaping a first pulsed laser beam having a wavelength which is absorbed in the semiconductor film into a long beam on a surface of the semiconductor film, and
• moving the substrate in a first direction relative to the long beam while irradiating a second laser beam having a fundamental wave into the surface of the semiconductor film so as to overlap with a region irradiated with the first pulsed laser beam at the same time as the first pulsed laser beam,
• wherein the energy of the second laser beam is modulated in synchronization with a pulse oscillation of the first pulsed laser beam, and
• wherein a net energy of the first pulsed laser beam and a second laser beam absorbed in the semiconductor film per unit time is controlled to be constant.