US 7,125,742 B2 · Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

Abstract

The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Claims24

Dependent claims

A method for fabricating a multi-passivation layer structure for organic thin-film transistors, comprising the steps of:

forming a gate layer on a substrate;
forming a insulator layer on said substrate;
forming a electrode layer on said insulator layer;
forming a semiconductor layer on said insulator layer and said electrode layer;
and
forming a multi-passivation layer including forming a first passivation layer on said semiconductor layer, forming a second passivation layer on said first passivation layer, and forming a third passivation layer on said second passivation layer, wherein said multi-passivation layer structure is formed of PVA and PVP and said first passivation layer is formed from PVA.

3 more elements

Dependencies are inferred from the claim text.

Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

Life of this patent

Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

Life of this patent

Abstract

Claims24