Method of fabricating a photosensitive structure
AssigneePowerchip Semiconductor Corp.
InventorsMing-Jeng Huang, Chen-Chiu Hsue
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Abstract
A method of fabrication of a photosensitive device is disclosed. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP thereof. The dielectric layer comprises a first dielectric layer formed by PECVD and a second dielectric layer formed by HDPCVD.
Claims6
A method for fabricating a photosensitive device, comprising the steps of:
- providing a substrate with at least an insulator layer formed thereon, wherein the insulator layer comprises a plurality of photoreceiving regions therein, a plurality of conductive patterns are formed on the insulator layer without covering the photoreceiving regions;
- forming a dielectric layer on the insulator and the conductive patterns;
- and
- polishing the dielectric layer, wherein the dielectric layer comprises a first dielectric layer formed by PECVD and a second dielectric layer formed by HDPCVD.
Dependencies are inferred from the claim text.