Robust Group III light emitting diode for high reliability in standard packaging applications
AssigneeCree, Inc.
InventorsJohn Adam Edmond, Brian Thibeault, David Beardsley Slater, Jr., Gerald H. Negley, Van Allen Mieczkowski
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Abstract
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
Claims24
A method of forming a vertically conductive light emitting diode, comprising:
- forming an ohmic contact on a first surface of a silicon carbide substrate;
- forming a buffer structure on the second surface of the substrate;
- forming a Group III nitride, light emitting active region on the buffer structure;
- forming a light transmissive, p-type Group III nitride contact layer on the active region;
- forming a light transmissive metal contact on said contact layer;
- and
- sputter depositing a light transmissive silicon nitride passivation layer on the metal contact such that light generated in the active region emits through the contact layer, the metal contact, and the passivation layer.
A method of forming a vertically conductive light emitting diode having a Group III nitride active region, comprising:
- forming a light transmissive, p-type Group III nitride contact layer on the active region;
- forming a light transmissive metal contact on the contact layer;
- and
- sputter depositing a light transmissive silicon nitride passivation layer on the metal contact such that light generated in the active region emits through the contact layer, the metal contact, and the passivation layer.
Dependencies are inferred from the claim text.