Semiconductor light emitting device and its manufacturing method

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the method comprising the steps of:

• forming the n-side cladding later;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component first growing an undoped or n-type first layer, then growing a p-type second layer doped with a p-type impurity such that the first layer is formed nearer the active layer, and the first layer having a thickness not thinner than 50 nm.

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer and have a ridge structure, the method comprising the steps of:

• forming the n-side cladding layer;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component thereof and containing substantially no hydrogen by first growing an undoped or n-type first layer, then growing a p-type second layer doped with a p-type impurity such that the first layer is formed nearer the active layer, and then growing a third layer having a larger band gap than the second layer, and p-type layers in opposite sides of the ridge having a thickness in the range from 0 to 100 nm.

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer and have a ridge structure, the method comprising the steps of:

• forming the n-side cladding layer;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component thereof and containing substantially no hydrogen by first growing an undoped or n-type first layer, then growing a p-type second layer doped with a p-type impurity such that the first layer is formed nearer the active layer, then growing a third layer having a larger band gap than the second layer, and bottom surfaces of portions in opposite sides of the ridge being deeper than the boundary between the first layer and the second layer.

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer and have a ridge structure, the method comprising the steps of:

• forming the n-side cladding layer;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component thereof and containing substantially no hydrogen by first growing an undoped or n-type first layer, then growing a p-type second layer doped with a p-type impurity such that the first layer is formed nearer the active layer, and p-type layers in opposite sides of the ridge having a thickness in the range from 0 to 100 nm.

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer and have a ridge structure, the method comprising the steps of:

• forming the n-side cladding layer;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component thereof and containing substantially no hydrogen by first growing an undoped or n-type first layer, then growing a p-type second layer doped with a p-type impurity such that the first layer is formed nearer the active layer, and bottom surfaces of portions in opposite sides of the ridge being deeper than the boundary between the first layer and the second layer.

A method of manufacturing a semiconductor light emitting device composed of nitride III-V compound semiconductors to have a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the method comprising the steps of:

• forming the n-side cladding layer;
• forming the active layer;
• and
• forming the p-side cladding layer in a carrier gas atmosphere containing nitrogen as a major component thereof and containing substantially no hydrogen by in which the distance between the active layer and one of p-type layers doped with a p-type impurity nearest to the active layer is not less than 50 nm, and the p-type layer nearest to the active layer has a larger band gap than the p-side cladding layer.